
CONFIDENTIAL [AK8999A/AW/AD]
MS1600-E-00 2014/05
- 19 -
7.2.2) Noise Characteristics
VDD = 3, 3.3, 5V ± 10%, Ta = -40 to 105ºC, register default, unless otherwise note
Parameter Symbol Conditions Min.
Typ.
note1)
Max.
note2)
Units
Description
Noise
Nout1
VP/VN→VOUT
External feedback
capacitance 2.2nF
ESCR[0]=1h
230 530 μVrms @1Hz -
100kHz
Nout2
VP/VN→VOUT
ESCF[1:0]=1h
ESCR[0]=1h
250 550 μVrms @1Hz -
100kHz
note1) VDD = 5V, Temp. = 25C, Total gain: 60x (G1 gain: 10x, G2 gain: 1.5x, G3 gain: 1.8x, S/H gain: 2x,
Buffer gain: 1.111x), Output reference voltage = 0.02*VDD, Sampling frequency = 8.33kHz, Sensor
drive voltage=4V, Internal temperature sensor use, Offset Voltage = 0mV, Offset temp. drift 1st order
coefficient = 0mV/C, Span Voltage = 80mV, Sensitivity temp. drift 1st order coefficient =
0ppm/C. Design reference value; no production test performed.
note2) Total gain: 60x@25C (G1 gain: 10x, G2 gain: 1.5x, G3 gain: 1.8x, S/H gain: 2x, Buffer gain:
1.111x), Output reference voltage = 0.02*VDD, Sampling frequency = 8.33kHz, Internal
temperature sensor use, Sensor drive voltage=4V(VDD=5V±10%)/2.2V(VDD=3V, 3.3V±10%),
Offset Voltage@25C = ±35mV(VS = 4V)/±19.25mV(VS = 2.2V), Offset temp. drift 1st order
coefficient = ±0.08mV/C (VS = 4V)/±0.044mV/C (VS = 2.2V), Span Voltage @25C = 0 to
80mV(VS = 4V) / 0 to 40mV(VS = 2.2V), Sensitivity temp. drift 1st order coefficient = -4000 to
+2500ppm/C. Design reference value; no production test performed.
7.2.3) G1/2 Gain Adjustment Circuit
VDD = 3, 3.3, 5V ± 10%, Ta = -40 to 105ºC, register default, unless otherwise note
Parameter Symbol Conditions Min. Typ. Max.
Units
Description
Measurement in test mode
Unadjusted G1/2
output voltage
Vg1 VP-VN = 80mV
VDD = 5V ± 10%
1150 1200 1250 mV
Vg2 VP-VN = 40mV
VDD = 3, 3.3 ± 10%
550 600 650 mV
G1 adjustment
range
G1sc+ EIG[3:0] = Ch 5 times
G1sc- EIG[3:0] = 0h 70 times
Adj. Step G1stp 2,3,5,10 times
G2 G2sc1+ EIG[4] = 0h 3 times
G2sc1- EIG[4] = 1h 1.5 times
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